Scaling of Si/SiGe Resonant Interband Tunnel Diodes (May 2010)

Authors

Arnob L. Alam

Publication Date

2010

Document Type

Paper

Abstract

Resonant Interband Tunnel Diodes (RITD) with device sizes ranging from r=20μm to r=50nm (mask defined radii) were manufactured using an e-beam lithography and dry-etch process. The peak to valley current-ratio (PVCR) and peak current density (j_peak) of the devices were measured. The devices showed high series resistance, and currents and PVCR did not scale in a predictable pattern.

Recommended Citation

Alam, Arnob L. (2010) "Scaling of Si/SiGe Resonant Interband Tunnel Diodes (May 2010)," Journal of the Microelectronic Engineering Conference: Vol. 19: Iss. 1, Article 14.
Available at: https://repository.rit.edu/ritamec/vol19/iss1/14