Alignment patterns were exposed using a combination of optical lithography and electron beam lithography. Sub-200nm alignment was achieved by using a combination of silicon topography, global, and fine alignment marks. The average misalignment using this combination was .45 microns. Further work must he done in order to test the efficacy of these alignment marks under different types of thin films.
"Cross Platform Alignment (May 2010),"
Journal of the Microelectronic Engineering Conference: Vol. 19
, Article 13.
Available at: http://scholarworks.rit.edu/ritamec/vol19/iss1/13