The design of a simulator for EUV lithography mirrors is presented. A method of computing the expected value of reflectance and transmittance in stratified absorbing media with rough interfaces, based on Jay Eastman’s matrix formalism for scattered fields, was developed. In addition, a proof of principle experiment confirmed process feasibility for EUV mirror research at RIT.
Jota, Thiago S.
"A Simulator for EUV Lithography Mirrors,"
Journal of the Microelectronic Engineering Conference: Vol. 18
, Article 7.
Available at: http://scholarworks.rit.edu/ritamec/vol18/iss1/7