The formation of Nickel Nanodots (Ni-ND) were studied for the purpose of their potential use in memory devices. Ni-NDs were formed on SiO2 and integrated into capacitors. These structures were then tested to demonstrate charge storage characteristics.
Pacifico, Anthony J.
"Nickel Nanodots for Memory Devices,"
Journal of the Microelectronic Engineering Conference: Vol. 18
, Article 12.
Available at: http://scholarworks.rit.edu/ritamec/vol18/iss1/12