The goal of this project was to successfully demonstrate a double patterning technique using equipment available at the SMFL at RIT. Traditional methods of increasing resolution have been essentially exhausted; therefore new methods of increasing resolution are needed. One of these new methods is double patterning, which splits a dense pattern into two less dense patterns which are imaged in two steps, thereby reducing imaging constraints. Overall a proof of concept of the double patterning process was achieved. Imaging of 0.5 μm drawn features was demonstrated, resulting in 0.3 μm post-etch.
"Double Patterning Technique Using an Aluminum Hardmask,"
Journal of the Microelectronic Engineering Conference: Vol. 17
, Article 7.
Available at: http://scholarworks.rit.edu/ritamec/vol17/iss1/7