Thermally grown silicon oxide growth enhancement using small amounts of NF3 was investigated, examining both growth rate and interface quality. Low temperature results showed noted growth rate enhancement at temperatures above 7000 C. Interface quality showed significant improvement. Further enhancement is expected through modified chamber and equipment design.
Rettmann, Ryan D.
"Thermal SiO2 Growth Rate Enhancement at Low Temperature Using an NF3 Additive,"
Journal of the Microelectronic Engineering Conference: Vol. 17
, Article 15.
Available at: http://scholarworks.rit.edu/ritamec/vol17/iss1/15