A rapid melt growth process is performed in the formation of Esaki tunnel junctions on in-situ n-doped germanium on silicon substrates. An aluminum-silicon alloy is used as the p-dopant for the junctions as well as an ohmic contact for testing. The rapid thermal anneal (RTA), used for the incorporation of the aluminum-silicon, is characterized by varying ramp rate and peak anneal temperatures. It is found that peak anneal temperature is the dominant factor affecting the current density through the devices. The maximum current density recorded is 2098mA/cm2 at a peak anneal temperature of 620°C.
"Germanium Esaki Diodes by N-type In-Situ Doping,"
Journal of the Microelectronic Engineering Conference: Vol. 17
, Article 10.
Available at: http://scholarworks.rit.edu/ritamec/vol17/iss1/10