Detailed within this paper is investigation of using low temperature processes to activate dopant in silicon. Parameters studied include breakdown voltage, turn-on voltage, leakage current, and ideality factor. Strong correlation was seen between the temperature of activation and both the ideality factor and leakage current. Breakdown voltage seemed constant except for the highest temperature processing. Turn-on voltage seemed to change for boron activation, but not for phosphorus activation
Watson, Geoff E.
"Junction Integrity for Low Temperature Dopant Activation in Silicon,"
Journal of the Microelectronic Engineering Conference: Vol. 16
, Article 2.
Available at: http://scholarworks.rit.edu/ritamec/vol16/iss1/2