A field Induced Band to Band Tunneling Effect Transistor was designed, fabricated and tested. The devices are to take the shape of finFETs and plainer devices i~hich will employ mesa isolation technology. Degenerate dopings were achieved through the use of proximity diffusion in a rapid thermal processing tool. Final results include design parameters, fabrication parameters, fabrication techniques, SEM Images, electrical test results & analysis, and areas of continuing work.
"Field Induced Band-to-Band Tunneling Effect Transistor (FIBTET),"
Journal of the Microelectronic Engineering Conference: Vol. 15
, Article 4.
Available at: http://scholarworks.rit.edu/ritamec/vol15/iss1/4