The goal of this experimentation consists of the formation of TiSi2 and demonstration of its electrical properties. The successful formation of a TiSiproduct was be confirmed by scanning electron micrograph (SEM) images, Rutherford Backscatter Spectroscopy (RBS) data, and electrical characterization. Following an annealing heat treatment, the RBS data indicated the presence of a Si substrate, a film that compositionally appears to be TiSi2, and a surface layer of TiO2. The electrical testing indicates the presence of ohmic behavior, and the resistance is strongly dependant on the furnace annealing and rapid thermal processing (RTP) treatments.
Haydock, Laurel E.
"Characterization of TiSi2 Process and Electrical Properties,"
Journal of the Microelectronic Engineering Conference: Vol. 15
, Article 13.
Available at: http://scholarworks.rit.edu/ritamec/vol15/iss1/13