Zirconium oxide, a high-k gate dielectric, and molybdenum, a refractory metal, were successfully integrated into an existing submicron NMOS transistor process at RIT. Submicron high-k gate dielectric metal gate transistors were produced as a result of this project, and electrical characteristics were compared to reference submicron transistors fabricated with 75 A silicon dioxide gate dielectrics and polysilicon gates.
Jaeger, Daniel J.
"Integration of High-K Dielectrics and Metal Gates into Submicron NMOS Transistors at RIT,"
Journal of the Microelectronic Engineering Conference: Vol. 15
, Article 1.
Available at: http://scholarworks.rit.edu/ritamec/vol15/iss1/1