Publication Date
2004
Document Type
Paper
Abstract
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm immersion lithography. Microlithography is the key technology that is pacing Moore’s Law. With critical transistor features reaching the 45nm device node, the development for new techniques in optical lithography are well underway. Large investments have been made into the Next Generation Lithography (NGL) technology development such as VUV (vacuum ultraviolet) and EUV (extreme ultraviolet) projection lithography. However, an extension of optical imaging at 193 nm deep ultraviolet (DUV) to immersion lithography at the same wavelength offers considerable potential for it to be used as a next step in production, postponing the introduction of EUVL.
Recommended Citation
Park, James H.
(2004)
"The Interaction of Ultra-Pure Water and Photoresist in 193nm Immersion Lithography,"
Journal of the Microelectronic Engineering Conference: Vol. 14:
Iss.
1, Article 7.
Available at:
https://repository.rit.edu/ritamec/vol14/iss1/7