A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitridation was a two step process involving variations of nitrous oxide and oxygen thermal soak times. The investigation of oxynitride gate dielectric was carried out through the fabrication of MOS capacitors. Thickness measurements were obtained using VASE ellipsometry and CV analysis was performed to test the electrical integrity of the dielectric. The CV analysis resulted in high frequency curves that displayed a low frequency response due to minority charge.
"Development of Thin Gate Oxides for Advanced CMOS Applications,"
Journal of the Microelectronic Engineering Conference: Vol. 14
, Article 4.
Available at: http://scholarworks.rit.edu/ritamec/vol14/iss1/4