A study has been performed to determine critical mechanisms involved in formation of nickel suicides. The process parameters under investigation were silicidation temperature, presilicide N2+ implant, and the presence of a titanium capping layer. Contact sheet resistance phosphorous-implanted silicon was measured and determined to degrade with high silicidation temperature. Titanium capping was found to improve contact resistance and compensate for the effects of high temperature treatment for polycides. The nitrogen incorporation via implant shows a degradation in resistivity for both silicides and polycides.
"Study of Nickel Silicide Processes for Advanced CMOS Applications,"
Journal of the Microelectronic Engineering Conference: Vol. 13
, Article 14.
Available at: http://scholarworks.rit.edu/ritamec/vol13/iss1/14