A phase-edge contact immersion optical lithography system utilizing a 193nm Argon Fluoride (ArF) excimer laser was designed. The ArF laser was passed through a 600nm quartz diffraction grating. The diffraction grating was placed in contact with the substrate. The gap between the mask and substrate was varied by the use of transparency sheets to study the effects of linewidth control and resolution as a function of this distance. This was done for both air and water as the indexing medium between the mask and substrate. Images were acquired from scanning electron micrographs (SEM’s) for each of the cases analyzed.
Watson, Bryan P.
"Phase Edge Contact Immersion Lithography at 193 nm,"
Journal of the Microelectronic Engineering Conference: Vol. 13
, Article 12.
Available at: http://scholarworks.rit.edu/ritamec/vol13/iss1/12