The F1nFET is a novel transistor that is fabricated using silicon on insulator (SOl) technology. The body of the transistor is etched out of the top layer of silicon. The device’s polysilicon source I drain are deposited. The gate is self-aligned to the source drain. Contact cuts are made and metal is etched and patterned. The devices did not show field effect as anticipated. Analysis suggested breakdown of the gate oxide.
Harvey, Christopher T.
"Raised Polysilicon Source / Drain FinFET Fabrication,"
Journal of the Microelectronic Engineering Conference: Vol. 12
, Article 6.
Available at: https://scholarworks.rit.edu/ritamec/vol12/iss1/6