A Tantalum Pentoxide deposition by reactive sputtering was optimized on a CVC-601 sputterer and working MOS transistors were made using Tantalum Pentoxide. The target was an 8” pure Tantalum target. The optimization was done over a power range of 700 to 1700W DC and over an Oxygen flow of 15 to 35%. The optimal process from this study was at 1200W and an Oxygen flow of 15% or less. A standard PMOS process was modified to use Tantalum Pentoxide using the gate dielectric. The resulting transistors worked well.
Bossard, Mark A.
"Tantalum Pentoxide Deposition and Applications,"
Journal of the Microelectronic Engineering Conference: Vol. 10
, Article 5.
Available at: http://scholarworks.rit.edu/ritamec/vol10/iss1/5