Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. By employing statistically designed experiments, the number of experimental runs required was minimized. The full-factorial experimental design was set up to examine effects temperature, gas flow and pressure had on deposition rate, wafer to wafer uniformity, within the wafer uniformity and within run uniformity. The average deposition rate found to be 112A per minute. The LTO baseline process conditions optimized based on the results of this project are: Temperature of 410C, pressure of 33OmTorr and gas flow ratio of 0.55.
"Development of LTO LPCVD Process for 6" Wafers at RIT,"
Journal of the Microelectronic Engineering Conference: Vol. 10
, Article 19.
Available at: http://scholarworks.rit.edu/ritamec/vol10/iss1/19