Microtec, a diffusion-drift model simulator by Siborg Systems, Inc., was used to simulate RIT’s process for a 2-micron NFET (Long Channel), a scaled down NFET (Short Channel), and our new advanced CMOS Process NFET. The accuracy of the simulator was tested with voltage threshold curves, sub-threshold characteristic tests, potential distribution plots, doping profiles, and oxide growth measurements. Microtec proved to be able to easily model RIT’s device performance and process characteristics with only a small amount of modification.
Overbeck, Charles R.
"RIT Process and Device Simulation with Microtec,"
Journal of the Microelectronic Engineering Conference: Vol. 10
, Article 14.
Available at: http://scholarworks.rit.edu/ritamec/vol10/iss1/14