Phosphorus solid sources for doping of silicon wafers were characterized by keeping the temperature constant and varying the diffusion time. Sheet resistances and junction depths were measured using a four-point station and the groove and stain method, respectively. The results were contrasted with the SUPREM II predictions.
Smith, Charles G.
"Characterization of Solid Source Phosphorus Doping Diffusion,"
Journal of the Microelectronic Engineering Conference: Vol. 1
, Article 29.
Available at: http://scholarworks.rit.edu/ritamec/vol1/iss1/29