Growth of Anodic Al2O3 Films

Authors

Bruce Parmelee

Publication Date

1987

Document Type

Paper

Abstract

The anodic oxidation of Aluminum (Al), which is a low temperature process, was used to form an aluminum oxide (Al₂O₃) film for use as an insulating layer. The anodization was done in a diluted, approximately 10% by volume, sulferic acid solution (H₂SO₄). Constant anodization voltages of 10, 15, and 20 volts, were maintained to obtain layers of Al₂O₃ ranging in thickness and refractive index from 3375-4077A and 1.46-1.95 receptively.

Recommended Citation

Parmelee, Bruce (1987) "Growth of Anodic Al2O3 Films," Journal of the Microelectronic Engineering Conference: Vol. 1: Iss. 1, Article 26.
Available at: https://repository.rit.edu/ritamec/vol1/iss1/26