The Effects of Internal Gettering on Bulk Generation Lifetime
The effects of internal gettering on the bulk generation lifetime were investigated by examining the transient response of a MOS capacitor as it recovered from deep depletion to normal inversion. Unfortunately, test equipment limitations precluded the obtainment of quantitative measurement but qualitative differences were observed.
Lekas, James S.
"The Effects of Internal Gettering on Bulk Generation Lifetime,"
Journal of the Microelectronic Engineering Conference: Vol. 1
, Article 16.
Available at: http://scholarworks.rit.edu/ritamec/vol1/iss1/16
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