An advanced ten level five micron CMOS process was designed. The process was modeled using SUPREM II software to calculate doping profiles, junction depths, and threshold voltages.
Hock, John G.
"Design and Modeling of an Advance CMOS Process,"
Journal of the Microelectronic Engineering Conference: Vol. 1
, Article 12.
Available at: https://scholarworks.rit.edu/ritamec/vol1/iss1/12