A new program, BETA, will calculate a one-dimensional vertical transistor current gain using a modified Gummel approach , which incorporates heavy doping effects in the emitter such as band gap narrowing . It is assumed that the base transport factor is equal to one, that the transistor is operating at intermediate current levels, and that the minority carrier lifetime in the emitter is greater than 10 nanoseconds. The gain will be calculated using information from the impurity doping profile generated by SUPREM II. Preliminary results indicate that this approach will give results with less than 25% error.
"Computer Calculation of Bipolar Transistor Current Gain Using The Transistor Impurity Doping Profile,"
Journal of the Microelectronic Engineering Conference: Vol. 1
, Article 11.
Available at: http://scholarworks.rit.edu/ritamec/vol1/iss1/11