This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (JP) and PVCR up to 2.97 kA/cm2 and 3.08, respectively.
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Krom, R.; Pawlik, D.J.; Muhkerjee, S.; and Pandharpure, S., "Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy" (2007). Accessed from
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