A Talbot interference immersion lithography system that uses a compact prism is presented. The use of a compact prism allows the formation of a fluid layer between the optics and the image plane, enhancing the resolution. The reduced dimensions of the system alleviate coherence requirements placed on the source, allowing the use of a compact ArF excimer laser. Photoresist patterns with a half-pitch of 45 nm were formed at an effective NA of 1.05. In addition, a variable-NA immersion interference system was used to achieve an effective NA of 1.25. The smallest half-pitch of the photoresist pattern produced with this system was 38 nm.
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Bourov, Anatoly; Fan, Yongfa; Cropanese, Frank; and Lafferty, Neal, "Immersion microlithography at 193 nm with a Talbot prism interferometer" (2004). Accessed from
RIT – Main Campus