We report the first monolithic vertical integration of a Si/SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Chung, Sung-Yong; Jin, Niu; Yu, Ronghua; and Berger, Paul, "Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios" (2003). Accessed from
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