The Si/SiGe RITDs grown by MBE have been monolithically integrated with CMOS for the first time. The integrated devices resulted in a PVCR (peak-to-valley current ratio) of 2.8 at room temperature, showing promise towards the realization of RITD/CMOS circuitry. A RITD-NMOS MOBILE latch has been demonstrated in Si. This logic element enables digital and ternary circuit design for high density storage. The I-V characteristics of the integrated CMOS/RITD devices and ID-VD characteristics of NMOS and PMOS have been studied.
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Sudirgo, S.; Nandgaonkar, R.P.; Curanovic, B.; and Hebding, J., "Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS MOBILE Latch with High Voltage Swing" (2003). Accessed from
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