Description
A method of assist feature OPC layout is introduced using a frequency model-based approach. Through low-pass spatial frequency filtering of a mask function, the local influence of zero diffraction energy can be determined. By determining isofocal intensity threshold requirements of an imaging process, a mask equalizing function can be designed. This provides the basis for frequency model-based assist feature layout. By choosing assist bar parameters that meet the requirements of the equalizing function, through-pitch focus and dose matching is possible for large two dimensional mask fields. The concepts introduced also lead to additional assist feature options and design flexibility .
Date of creation, presentation, or exhibit
7-30-2002
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Bruce W. Smith, Dale E. Ewbank, "OPC and image optimization using localized frequency analysis", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474509; https://doi.org/10.1117/12.474509
Campus
RIT – Main Campus
Comments
Copyright 2002 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.