This study extends the preliminary work of the authors, presenting improved epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunnel diodes (RITDs) with current densities which exceed any previously reported for a Si-based NDR device. For the first time, the needs of Si-based TDTL circuits are beginning to be addressed, Two new classes of Si-based NDR devices are also reported here: Si-only RITDs and Si/Si0.5Ge0.5 heterojunction Esaki tunnel diodes with a digitally graded superlattice (DG-SL).

Date of creation, presentation, or exhibit



Copyright 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. ISBN: 0-7803-4774-9Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type

Conference Proceeding

Department, Program, or Center

Microelectronic Engineering (KGCOE)


RIT – Main Campus