This study extends the preliminary work of the authors, presenting improved epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunnel diodes (RITDs) with current densities which exceed any previously reported for a Si-based NDR device. For the first time, the needs of Si-based TDTL circuits are beginning to be addressed, Two new classes of Si-based NDR devices are also reported here: Si-only RITDs and Si/Si0.5Ge0.5 heterojunction Esaki tunnel diodes with a digitally graded superlattice (DG-SL).
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Rommel, Sean; Dillon, Thomas; Berger, Paul; and Lake, Roger, "Si-based interband tunneling devices for high-speed logic and low power memory applications" (1998). Accessed from
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