A track-mounted, in-situ Dissolution Rate Monitor (DRM) is used to study the impact of exposure variations on g-line, i-line and DUV positive chemically-amplified resists. In the i-line case, a comparative study between constant spray and a spray/puddle process was undertaken. In all cases, modeling parameters were extracted from the track-mounted DRM data and entered into 2D and 3D simulators using an experimentally-generated Development Rate vs. PAC concentration table. Simulated profiles were compared with actual SEM cross-sections. Whenever possible, DRM traces were used to analyze standing waves, surface inhibition effects and quantify resist performance by calculating contrast. For the g-line case, the impact of PEB temperature upon the standing wave effects, as quantified by the in-situ DRM data, was studied.
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Dutta-Chowdhury, Saraubh; Alexander, David; Goldman, Mark; and Kukas, Alan, "Photolithography process characterization and 3D simulation using track-mounted development rate monitor data" (1995). Accessed from
RIT – Main Campus