Description

A track-mounted, in-situ Dissolution Rate Monitor (DRM) is used to study the impact of exposure variations on g-line, i-line and DUV positive chemically-amplified resists. In the i-line case, a comparative study between constant spray and a spray/puddle process was undertaken. In all cases, modeling parameters were extracted from the track-mounted DRM data and entered into 2D and 3D simulators using an experimentally-generated Development Rate vs. PAC concentration table. Simulated profiles were compared with actual SEM cross-sections. Whenever possible, DRM traces were used to analyze standing waves, surface inhibition effects and quantify resist performance by calculating contrast. For the g-line case, the impact of PEB temperature upon the standing wave effects, as quantified by the in-situ DRM data, was studied.

Date of creation, presentation, or exhibit

1995

Comments

Proceedings of the SPIE Conference on Advances in Resist Technology and Processing XII, vol. 2438, pp. 659-672, April 1995 Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type

Conference Proceeding

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Campus

RIT – Main Campus

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