Description
Photoresist modulation curves are introduced as a quantitative way to characterize the photoresist process performance when used as a detector in a microlithographic system. The new method allows predicting exposure latitude of the photoresist process across a wide range of resolutions and modulation levels of the aerial image. The data collection process is demonstrated using an immersion interference system, capable of variable resolution and full control over the modulation of the delivered aerial image.
Date of creation, presentation, or exhibit
5-12-2004
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Anatoly Bourov, Yongfa Fan, Frank C. Cropanese, Bruce W. Smith, "Photoresist modulation curves", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.602805; https://doi.org/10.1117/12.602805
Campus
RIT – Main Campus
Comments
Copyright 2004 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.