Photoresist modulation curves are introduced as a quantitative way to characterize the photoresist process performance when used as a detector in a microlithographic system. The new method allows predicting exposure latitude of the photoresist process across a wide range of resolutions and modulation levels of the aerial image. The data collection process is demonstrated using an immersion interference system, capable of variable resolution and full control over the modulation of the delivered aerial image.
Date of creation, presentation, or exhibit
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Anatoly Bourov, Yongfa Fan, Frank C. Cropanese, Bruce W. Smith, "Photoresist modulation curves", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.602805; https://doi.org/10.1117/12.602805
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