Ge12xCx/Si heterostructure photodiodes with nominal carbon percentages (01.3 mm, compatible with fiber optic wavelengths. External quantum efficiency of these thin surface-normal photodetectors was measured up to 2.2%, which decreased as the carbon percentage was increased.
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Shao, Xiaoping; Rommel, Sean; and Orner, B.A., "1.3 nm photoresponsivity in Si-based Ge1-xCx photodiodes" (1998). Applied Physics Letters, Vol. 72 (No. 15),Accessed from
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