Abstract

Investigates the ion implantation of porous silicon (Si). Properties of light-emitting Si; Application of continuous-wave and time dependent photoluminescence spectroscopies; Comparison of dopant implantation effect in varying doses.

Publication Date

3-7-1994

Comments

Applied Physics Letters article.Please see www.aip.org/ for more information. ISSN:0003-6951 Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type

Article

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Campus

RIT – Main Campus

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