Abstract

Resonant interband tunneling diodes on silicon substrates are demonstrated using a Si/Si0.5Ge0.5 /Si heterostructure grown by low temperature molecular beam epitaxy which utilized both a central intrinsic spacer and d-doped injectors. A low substrate temperature of 370 °C was used during growth to ensure a high level of dopant incorporation. A B d-doping spike lowered the barrier for holes to populate the quantum well at the valence band discontinuity, and an Sb d-doping reduces the doping requirement of the n-type bulk Si by producing a deep n1 well. Samples studied from the as-grown wafers showed no evidence of negative differential resistance ~NDR!. The effect of postgrowth rapid thermal annealing temperature was studied on tunnel diode properties. Samples which underwent heat treatment at 700 and 800 °C for 1 min, in contrast, exhibited NDR behavior. The peak-to-valley current ratio ~PVCR! and peak current density of the tunnel diodes were found to depend strongly on d-doping placement and on the annealing conditions. PVCRs ranging up to 1.54 were measured at a peak current density of 3.2 kA/cm2.

Publication Date

10-12-1998

Comments

Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/.Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type

Article

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Campus

RIT – Main Campus

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