Resonant interband tunneling diodes on silicon substrates are demonstrated using a Si/Si0.5Ge0.5 /Si heterostructure grown by low temperature molecular beam epitaxy which utilized both a central intrinsic spacer and d-doped injectors. A low substrate temperature of 370 °C was used during growth to ensure a high level of dopant incorporation. A B d-doping spike lowered the barrier for holes to populate the quantum well at the valence band discontinuity, and an Sb d-doping reduces the doping requirement of the n-type bulk Si by producing a deep n1 well. Samples studied from the as-grown wafers showed no evidence of negative differential resistance ~NDR!. The effect of postgrowth rapid thermal annealing temperature was studied on tunnel diode properties. Samples which underwent heat treatment at 700 and 800 °C for 1 min, in contrast, exhibited NDR behavior. The peak-to-valley current ratio ~PVCR! and peak current density of the tunnel diodes were found to depend strongly on d-doping placement and on the annealing conditions. PVCRs ranging up to 1.54 were measured at a peak current density of 3.2 kA/cm2.
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Rommel, Sean; Dillon, Thomas; and Dashiell, M.W., "Room temperature operation of epitaxially grown Si/Si0.5Ge0.5 /Si resonant interband tunneling diodes" (1998). Applied Physics Letters, Vol. 73 (No. 15),Accessed from
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