Abstract

Si/SiGe resonant interband tunnel diodes (RITDs) employing -doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers sandwiching the B -doping spike used to suppress B out-diffusion are discussed. A room-temperature PVCR of 3.6 was measured with a peak current density of 0.3 kA/cm2. Results clearly show that by introducing SiGe layers to clad the B -doping layer, B diffusion is suppressed during post-growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in reducing defects and results in a lower valley current and higher PVCR. RITDs grown by selective area molecular beam epitaxy (MBE) have been realized inside of low-temperature oxide openings, with performance comparable with RITDs grown on bulk substrates.

Publication Date

2003

Comments

Copyright 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type

Article

Department, Program, or Center

Microsystems Engineering (KGCOE)

Campus

RIT – Main Campus

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