Abstract

Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the IC–VEC characteristics under common emitter configuration can be controlled by a third terminal which is the basis of the integrated circuit. The estimated NDR values from the DC I–V characteristics, assuming that the NDR is linear, can be varied from about -27.5 Ω to -180 Ω with respect to VCE in the range of 0.96 V–1.16 V.

Publication Date

2004

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type

Article

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Campus

RIT – Main Campus

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