Abstract
Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic circuitry, are experimentally demonstrated.
Publication Date
2004
Document Type
Article
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
S.-Y. Chung, N. Jin, P. R. Berger, R. Yu, P. E. Thompson, R. Lake, S. L. Rommel, and S. K. Kurinec, Appl. Phys. Lett. 84, 2688 (2004). https://doi.org/10.1063/1.1690109
Campus
RIT – Main Campus
Comments
Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters 84, 2688 (2004) and may be found at: https://doi.org/10.1063/1.1690109