The first demonstration of the monolithic integration of CMOS and Si/SiGe resonant interband tunnel diodes (RITD) with negative differential resistance (NDR) is reported in this paper. The Si/SiGe RITDs exhibited a peak-to-valley current ratio (PVCR) up to 2.8 and peak current density (Jp) of 0.26 kA/cm2 at room temperature. This study focused on the utilization of a pair of tunnel diodes connected in series to form a latch. Employing a FET to supply current into the latch, a RITD/NMOS monostable–bistable transition logic element (MOBILE) was realized. The latch exhibited a voltage swing of 84% at an applied supply voltage of 0.5 V. This logic element enables low voltage operation for high density circuit design of embedded memory.

Publication Date



Solid-state electronics article.Please see www.ScienceDirect.com for more information.Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type


Department, Program, or Center

Microelectronic Engineering (KGCOE)


RIT – Main Campus