The first demonstration of the monolithic integration of CMOS and Si/SiGe resonant interband tunnel diodes (RITD) with negative differential resistance (NDR) is reported in this paper. The Si/SiGe RITDs exhibited a peak-to-valley current ratio (PVCR) up to 2.8 and peak current density (Jp) of 0.26 kA/cm2 at room temperature. This study focused on the utilization of a pair of tunnel diodes connected in series to form a latch. Employing a FET to supply current into the latch, a RITD/NMOS monostable–bistable transition logic element (MOBILE) was realized. The latch exhibited a voltage swing of 84% at an applied supply voltage of 0.5 V. This logic element enables low voltage operation for high density circuit design of embedded memory.
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Sudirgo, S.; Nandgaonkar, R.P.; and Curanovic, B., "Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation" (2004). Elsevier - Solid-State Electronics, Vol. 48 (No. 10-11),Accessed from
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