An atomic force microscope (AFM) with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching (ICP-RIE) in C1/sub 2/-based plasma. A special staircase pattern was devised to allow AFM tip to access the etched sidewall of the waveguides in the normal direction. Statistical information such as correlation length and rms roughness of the sidewall profile obtained through three-dimensional imaging by AFM has been presented. rms roughness as low as 3.45 nm was measured on the sidewall of 4-micrometers-deep etched InP/InGaAsP heterostructures.
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Applied Physics Letters, vol. 83, no. 20, pp. 4116-4118, 2003
RIT – Main Campus