We report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0.998C 0.002 on an n-type Si substrate. Epitaxial Ge0.998C0.002 was grown on a (100) Si substrate by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification. The I-V characteristics of the p-GeC/n-Si diode indicate a reasonable reverse saturation current of 89 pA/μm2 at -1 V and a high reverse breakdown voltage in excess of -40 V. Photoresponse from the Ge0.998C0.002 p-n diode was observed from 1.3-μm laser excitation resulting in an external quantum efficiency of 1.4%.
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Shao, Xiaoping; Rommel, Sean; and Orner, B.A., "A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy" (1997). IEEE transactions on electron devices, Vol. 18 (Issue 9),Accessed from
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