We report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0.998C 0.002 on an n-type Si substrate. Epitaxial Ge0.998C0.002 was grown on a (100) Si substrate by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification. The I-V characteristics of the p-GeC/n-Si diode indicate a reasonable reverse saturation current of 89 pA/μm2 at -1 V and a high reverse breakdown voltage in excess of -40 V. Photoresponse from the Ge0.998C0.002 p-n diode was observed from 1.3-μm laser excitation resulting in an external quantum efficiency of 1.4%.

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Copyright 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.ISBN:0018-9383Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type


Department, Program, or Center

Microelectronic Engineering (KGCOE)


RIT – Main Campus